Ahir, Z.F.M and Zulkifli, A.Z and Hashim, Abdul Manaf (2008) Modeling and characterization of capacitively coupled interdigital-gated HEMT plasma device for terahertz wave amplification. In: Proceedings - 2nd Asia International Conference on Modelling and Simulation, AMS 2008, 13-15 May 2008.
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Official URL: http://dx.doi.org/10.1109/AMS.2008.185
A capacitively coupled interdigital-gated HEMT structure was used to investigate the occurrence of uniformity of electric field distribution along the structure. The structure was designed and simulated using Commercial Electromagnetic Sonnet Suites software. The return loss characteristics were analyzed and evaluated. The comparison of the admittance characteristics from simulation between dc connected structure and capacitively coupled structure is carried out in order to evaluate electromagnetic wave propagation. This structure kept uniform electric field in the channel when the dc biased is applied to the interdigital gate, which modulates the potential in the channel.
|Item Type:||Conference or Workshop Item (Paper)|
|Uncontrolled Keywords:||HEMT, interdigital, negative conductance, plasma wave, terahertz|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Maznira Sylvia Azra Mansor|
|Deposited On:||12 Jan 2009 04:15|
|Last Modified:||01 Jun 2010 15:53|
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