Universiti Teknologi Malaysia Institutional Repository

Modeling and characterization of capacitively coupled interdigital-gated HEMT plasma device for terahertz wave amplification

Ahir, Z.F.M and Zulkifli, A.Z and Hashim, Abdul Manaf (2008) Modeling and characterization of capacitively coupled interdigital-gated HEMT plasma device for terahertz wave amplification. In: Proceedings - 2nd Asia International Conference on Modelling and Simulation, AMS 2008, 13-15 May 2008.

[img] PDF
Restricted to Repository staff only

266Kb

Official URL: http://dx.doi.org/10.1109/AMS.2008.185

Abstract

A capacitively coupled interdigital-gated HEMT structure was used to investigate the occurrence of uniformity of electric field distribution along the structure. The structure was designed and simulated using Commercial Electromagnetic Sonnet Suites software. The return loss characteristics were analyzed and evaluated. The comparison of the admittance characteristics from simulation between dc connected structure and capacitively coupled structure is carried out in order to evaluate electromagnetic wave propagation. This structure kept uniform electric field in the channel when the dc biased is applied to the interdigital gate, which modulates the potential in the channel.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:HEMT, interdigital, negative conductance, plasma wave, terahertz
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:7613
Deposited By: Maznira Sylvia Azra Mansor
Deposited On:12 Jan 2009 04:15
Last Modified:01 Jun 2010 15:53

Repository Staff Only: item control page