Effects of complexing agents on electrochemical deposition of FeSxOy in ZnO/FeSxOy heterostructures

Abstract

Heterostructures which consist of ZnO and FeSxOy were deposited via electrochemical deposition (ECD) for application to solar cells. Galvanostatic ECD was used in FeSxOy deposition with a solution containing 100 mM Na2S2O3 and 30 mM FeSO4. To alter the film properties, L(+)-tartaric acid (C4H6O6) and lactic acid [CH3CH(OH)COOH] were introduced as the complexing agents into the FeSxOy deposition solution. Larger film thickness and smaller oxygen content were obtained for the films deposited with the complexing agents. ZnO was deposited on FeSxOy by two-step pulse ECD from a solution containing Zn(NO3)2. For the ZnO/FeSxOy heterostructures fabricated with/without complexing agents, rectifying properties were confirmed in the current density–voltage (J–V) characteristics. However, photovoltaic properties were not improved with addition of both complexing agents.