Universiti Teknologi Malaysia Institutional Repository

Scattering-limited and ballistic transport in a nano-CMOS circuit

Saad, Ismail and Tan, Micheal Loong Peng and Chi, Aaron Enn Lee and Ismail, Razali and Arora, Vijay Kumar (2008) Scattering-limited and ballistic transport in a nano-CMOS circuit. Microelectronics Journal . ISSN 0026-2692 (In Press)


Official URL: http://dx.doi.org/10.1016/j.mejo.2008.06.049


The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate saturation velocity due to the presence of a finite electric field at the drain. The current–voltage characteristics of a MOSFET are obtained and shown to agree well with the experimental observations on an 80 nm channel. When scaling complementary pair of NMOS and PMOS channels, it is shown that the length of the channel is proportional to the channel mobility. On the other hand, the width of the channel is scaled inversely proportional to the saturation velocity of the channel. The results reported may transform the way the ULSI circuits are designed and their performance evaluated.

Item Type:Article
Uncontrolled Keywords:Ballistic mobility, nano MOSFET, saturation velocity, quantum confinement
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:7501
Deposited By: Norhafizah Hussin
Deposited On:07 Jan 2009 00:43
Last Modified:14 Feb 2017 04:07

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