Universiti Teknologi Malaysia Institutional Repository

Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

Arora, Vijay K. and Michael, L. P. Tan and Saad, Ismail and Ismail, Razali (2007) Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor. Applied Physics Letters, 91 (10). ISSN 1077-3118

Full text not available from this repository.

Official URL: http://dx.doi.org/10.1063/1.2780058

Abstract

The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity is shown to rise with the increasing drain voltage approaching the intrinsic Fermi velocity, giving the equivalent of channel-length modulation. Quantum confinement effect degrades the channel mobility to the confining gate electric field as well as increases the effective thickness of the gate oxide. When the theory developed is applied to an 80 nm MOSFET, excellent agreement to the experimental data is obtained.

Item Type:Article
Uncontrolled Keywords: ballistic transport, MOSFET
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:7500
Deposited By: Norhafizah Hussin
Deposited On:06 Jan 2009 08:00
Last Modified:06 Jan 2009 08:00

Repository Staff Only: item control page