Universiti Teknologi Malaysia Institutional Repository

Design and simulation of a high performance lateral BJTs on TFSOI

Saad, Ismail and Ismail, Razali (2006) Design and simulation of a high performance lateral BJTs on TFSOI. In: Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference, 29 Oct 2006-1 Dec 2006, Kuala Lumpur, Malaysia.

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Official URL: http://dx.doi.org/10.1109/SMELEC.2006.380692


Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high performance transistor by using 2D process and device numerical simulation. Accurate geometrical structure and reasonably good doping profiles with a simple fabrication process are successfully achieved in the process simulation. However, a careful attention is required to define the mesh for the device to obtain an accurate measurement of device characteristics. With a base, low-doped collector, emitter and high-doped collector concentrations of 3 times 1017 cm-3, 1.0 times 1017 cm-3, 5 times 1020 cm-3 and 3 times 1020 cm-3 respectively, a variation of 0.1-0.13 mum base width is observed. I-V and frequency performance of these transistors are simulated and analyzed. Y-parameter measurement at frequency 10 MHz - 1000 GHz shows a 21 GHz fmax was successfully achieved at VBE=0.7 V, VCE=2.0 V and ICE=6.0 muA.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:BiCMOS process, I-V performance, Si-SiO2, Y-parameter measurement, current 6.0 muA, device numerical simulation, doping profiles, frequency 10 MHz to 1000 GHz, frequency 21 GHz, frequency 67 GHz, high performance lateral BJT design, high-doped collector, low-doped collector, low-doped emitter, semiconductor device characteristics, semiconductor device fabrication, silicon on insulator technology, size 0.1 mum to 0.13 mum, voltage 0.7 V, voltage 2.0 V
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:7499
Deposited By: Norhafizah Hussin
Deposited On:07 Jan 2009 00:22
Last Modified:01 Jun 2010 15:52

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