Sb2Te3 crystal a potential absorber material for broadband photodetector: a first-principles study

Abstract

Antimony telluride (Sb2Te3), a layered semiconductor material, is considered a promising absorbing material for a high-performance optoelectronic device within broadband wavelengths because of remarkable features like strong optical absorbance and the narrow direct band gap. In this work, based on the first-principles approach, we investigate in detail the structural, electronic and optical properties of the hexagonal Sb2Te3 compound. The structural and electronic properties were computed using the first-principles approach, treating exchange–correlation potential with generalized gradient approximation (GGA) within density functional theory (DFT). Furthermore, for accurate prediction of the band gap, we go beyond DFT and calculated band structure using GW correction. The optical properties, namely, imaginary and real parts of complex dielectric function, absorption coefficient, refractive index, reflectivity, extinction coefficient, electron energy loss function and optical conductivity are performed by quasi-particle many-body perturbation theory (MBPT) via Bethe-Salpeter equation (BSE). The computed structural parameters are in good agreement with available experimental data. The obtained quasi-particle (GW) correction band structure show the semiconducting character of Sb2Te3 material with a direct band gap Eg of 0.221 eV, in agreement with previously reported value (Eg = 0.210 eV) while the projected density of states indicates (PDOS) that the p-orbital of Sb and Te atoms are responsible for material properties near the Fermi level. To our knowledge, our first reported calculations of optical properties, with the inclusion of electron-hole effects are consistent with available experimental measurements. Consistencies of our findings with experimental data validate the effectiveness of electron-hole interaction for theoretical investigation of optical properties.