Azmi, S. N. C. and Rahman, S. F. A. and Hashim, A. M. (2016) Fabrication of reduced graphene oxide-gated AlGaAs/GaAs heterojunction transistor. In: 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016, 17 August 2016 through 19 August 2016, Kuala Lumpur; Malaysia.
Full text not available from this repository.
Official URL: https://www.scopus.com/inward/record.uri?eid=2-s2....
Abstract
In this report, we discuss possible chemical sensing operation of a graphene-gated AlGaAs/GaAs heterojunction transistor. Band diagram analysis shows the change in transistor conductivity after the graphene work function is altered due to chemical doping by the absorbates. Next, the fabrication process of the device is described and some preliminary results are presented. As for graphene gate, reduced graphene oxide (rGO) was prepared from reduction of graphene oxide solution by ascorbic acid. The reduction process was confirmed by UV-Vis spectroscopy, Raman spectroscopy and current-voltage measurement. Formation of the rGO gate structure in the device could be obtained by a simple procedure involves photolithography and lift-off process.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Aluminium Gallium Arsenide, Gallium Arsenide, heterojunction transistor, reduced graphene oxide |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 73075 |
| Deposited By: | Muhammad Atiff Mahussain |
| Deposited On: | 27 Nov 2017 02:00 |
| Last Modified: | 27 Nov 2017 02:00 |
Repository Staff Only: item control page
