Sultan, S. M. and Pu, S. H. and Fishlock, S. J. and Wah, L. H. and Chong, H. M. H. and McBride, J. W. (2016) Electrical behavior of nanocrystalline graphite/p-Si Schottky diode. In: 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, 22 August 2016 through 25 August 2016, Japan.
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Abstract
The electrical characteristics of nanocrystalline graphite (NCG) on p-type Si Schottky diodes were investigated. The NCG/p-Si Schottky diodes were fabricated on a 6-inch wafer by metal-free catalyst plasma enhanced chemical vapour deposition (PECVD) and photolithography pattern transfer method. The NCG film consists of nanoscale grains of ∼35 nm in size. The NCG/p-Si Schottky diode shows rectifying behavior with Schottky barrier height of 0.58 eV. This result in addition to nanosized grains can be exploited towards various chemical and gas sensor applications.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Diodes, Graphite, Nanocrystals, Nanosensors, Nanotechnology, Photolithography, Plasma enhanced chemical vapor deposition, Silicon wafers |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 72962 |
| Deposited By: | Muhammad Atiff Mahussain |
| Deposited On: | 26 Nov 2017 08:23 |
| Last Modified: | 26 Nov 2017 08:23 |
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