Morshed, T. and Kai, Y. and Matsumura, R. and Park, J. H. and Chikita, H. and Sadoh, T. and Hashim, A. M. (2016) Formation of large-grain crystalline germanium on single layer graphene on insulator by rapid melting growth. Materials Letters, 178 . pp. 147-150. ISSN 0167-577X
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Abstract
We demonstrate the crystallization of thermally deposited amorphous germanium (Ge) microstrips on single layer graphene (SLG) by rapid melting growth. Lateral growth of large grain crystalline Ge was successfully obtained over entire microstrip structure. SLG has shown its capability to suppress the spontaneous nucleation in the melting Ge, where no or less intermixing of C and Ge atoms has been detected. The interaction of C atoms from the graphene and Ge atoms at the interface is the possible reason for the observation of large compressive strain generated in the Ge strip grown on SLG. This technique provides an innovative breakthrough towards the realization of single-crystalline Ge-on-insulator (GOI) structure on SLG to facilitate the next-generation ultra-large-scale integrated circuits (ULSIs) with multifunctionalities.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Atoms, Carbon, Crystalline materials, Grain growth, Graphene, Melting, Semiconductor growth, Semiconductor materials, ULSI circuits, Carbon material, Germanium on insulators, Graphene on insulators, Large compressive strains, Melting growth, Single layer, Spontaneous nucleation, Ultra large scale integrated circuits, Germanium |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Malaysia-Japan International Institute of Technology |
| ID Code: | 71562 |
| Deposited By: | Widya Wahid |
| Deposited On: | 16 Nov 2017 08:40 |
| Last Modified: | 16 Nov 2017 08:40 |
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