Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4

Abstract

The thermal effect on stimulated emission cross section of 914 nm (R 2 →Z 5 ) emission of 4 F 3/2 → 4 I 9/2 transition in Nd:YVO 4 was investigated. The gain medium temperature was stabilized via thermoelectric cooler which controlled in the range of - 3 o C to 60 o C. The emi ssion spectrum was fitted using Lorentzian function to reveal an accurate linewidth. The stimulated emission cross section was estimated using Füchtbauer – Ladenburg Equation. It is yield that the peak stimulated emission is inversely proportional to temperature with a slope of - 1.39×10 - 22 cm 2 o C - 1 . The les s photon - phonon interactions in the crystal field at the lower temperature inducing narrow linewidth of transition line 914 nm at low temperature. Furthermore, less reabsorption effects at the terminal level allows the increases stimulated emission cross section in low temperature operation.