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The effect of doping and operation temperature on ZnO thin film gas sensor

Abdul Manap, Yazid and Ismail, Bakar and Md Yusuf, Mohd Nor and Wan Samsuri, Wan Nurulhuda and Wahab, Yusof and Othaman, Zulkafli (2007) The effect of doping and operation temperature on ZnO thin film gas sensor. Journal of solid state science and technology, 14 (1). pp. 11-16. ISSN 0128-8393

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Abstract

Rf magnetron sputtering system was used to deposit ZnO:Al thin film onto corning substrates as a CO gas sensor. The dependence of doping on CO gas sensing properties was investigated. The sputtering was carried out for 30 mins under rf power of 100W. The structure of the deposited ZnO:Al films were determined by atomic force microscopy (AFM). The CO gas sensing properties were determined by in-situ measurement for surface resistance of the thin film as a function of doping and operating temperature. It was found that ZnO:Al (4 wt%) thin film exhibits high sensitivity for CO.

Item Type:Article
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:6776
Deposited By: Assoc Prof Dr Zulkafli Othaman
Deposited On:10 Nov 2008 01:41
Last Modified:10 Nov 2008 01:41

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