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The electronic and transport properties of defective bilayer graphene nanoribbon

Johari, Zaharah and Auzar, Zuriana and Alias, Nurul Ezaila (2017) The electronic and transport properties of defective bilayer graphene nanoribbon. Journal of Nanoelectronics and Optoelectronics, 12 (2). pp. 177-183. ISSN 1555-130X

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Official URL: https://doi.org/10.1166/jno.2017.1981

Abstract

This paper reports the atomistic simulation of AA and AB stacking bilayer graphene nanoribbon (BGNR) incorporated vacancy defect. The vacancy defects include single vacancy (SV), stone wales (SW), divacancy (DV) and 57775 located in BGNR layers. Through simulation, it is demonstrated the SW defect less affected the bandgap in BGNR. In addition, the one dimensional signature of the transmission spectrum (TS) and density of state (DOS) vanished. Importantly, the result obtained shows that the vacancy defects that are located in either layer 1 (L1) or both layer 1 and layer 2 (L1 + L2) behave differently on the current–voltage (I–V) characteristic for both AA and AB stackings BGNR devices depending on the types of defect. The use of defect enables the modification of BGNR electronic and transport properties.

Item Type:Article
Additional Information:RADIS System Ref No:PB/2017/11347
Uncontrolled Keywords:electronic and transport properties, vacancy defect
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Advanced Informatics School
ID Code:66278
Deposited By: Fazli Masari
Deposited On:30 Nov 2017 01:03
Last Modified:30 Nov 2017 01:03

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