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Passively q-switched erbium-doped and ytterbium-doped fibre lasers with topological insulator bismuth selenide (Bi2Se3) as saturable absorber

Haris, Hazlihan and Sulaiman, Wadi Harun and Muhammad, Ahmad Razif and Caroline, Livan Anyi and Tan, Sin Jin and Ahmad, Fauzan and Roslan, Md. Nor and Nurul, Rozullyah Zulkepely and Arof, Hamzah (2017) Passively q-switched erbium-doped and ytterbium-doped fibre lasers with topological insulator bismuth selenide (Bi2Se3) as saturable absorber. Optics and Laser Technology, 88 . pp. 121-127. ISSN 0030-3992

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Official URL: http://dx.doi.org/10.1016/j.optlastec.2016.09.015

Abstract

This paper portrays a simple Q-switched Erbium-doped fibre (EDF) and Ytterbium doped fibre (YDF) lasers by using topological insulator (TI) Bismuth Selenide (Bi2Se3) as saturable absorber. The modulation depth of the fabricated Bi2Se3 is about 39.8% while its saturating intensity is about 90.2 MW/cm2. By depositing the TI Bi2Se3 SA onto fibre ferrules and incorporate it inside the proposed cavity, a stable Q-switching operation was achieved at 1 μm and 1.5 μm. The fabricated Bismuth Selenide (Bi2Se3) as saturable absorber (SA) is a broadband SA where it offers a compact and low cost fabrication which is beneficial in various photonic applications.

Item Type:Article
Additional Information:RADIS System Ref No:PB/2017/11337
Uncontrolled Keywords:bismuth selenide, erbium doped fibre
Subjects:T Technology
Divisions:Malaysia-Japan International Institute of Technology
ID Code:66167
Deposited By: Widya Wahid
Deposited On:13 Jul 2017 07:11
Last Modified:13 Jul 2017 07:11

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