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Preparation and Characterization of New Oxide Ion Conductors in Bi2O3-As2O5 System

Lee, S. L. and Lee, C. K. and Sinclair, D. C. and Chong, F. K. and Halim, S. A. and Yap, T. (2005) Preparation and Characterization of New Oxide Ion Conductors in Bi2O3-As2O5 System. Malaysian Journal of Chemistry, 7 (1). pp. 1-10.

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Abstract

Materials in xBi2O3-As2O5 binary system: 1 < x < 7, were prepared by solid state reaction. XRD shows that single phase materials were formed when x = 5, 5.5, 5.667, 5.75, 6 and 7. The symmetry and space group of the materials were determined. Compositions with 5 < x < 6.25 are solid solutions. Electrical properties of the single phase materials were studied using ac impedance spectroscopy at a frequency range of 10 Hz to 13 MHz. These materials are thermally stable and appear to be oxide ion conductors. Highest conductivity was obtained in Bi23As4O44.5 with s value of 5.66 x 10-5 ohm-1 cm-1, Ea = 0.72 eV at 300oC.

Item Type:Article
Uncontrolled Keywords:bismuth arsenate, oxide ion conductor
Subjects:Q Science > QD Chemistry
Divisions:Science
ID Code:6329
Deposited By: Dr Siew Ling Lee
Deposited On:08 Oct 2008 04:49
Last Modified:26 Oct 2010 04:31

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