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The evolution of Si-capped Ge islands on Si (100) by RF magnetron sputtering and rapid thermal processing: the role of annealing times

Abd. Rahim, A. F. and Hashim, M. R. and Ali, N. K. and Hashim, Abdul Manaf and Rusop, M. and Abdullah, M. H. (2014) The evolution of Si-capped Ge islands on Si (100) by RF magnetron sputtering and rapid thermal processing: the role of annealing times. Microelectronic Engineering, 126 . pp. 134-142. ISSN 0167-9317

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Official URL: http://dx.doi.org/10.1016/j.mee.2014.06.026

Abstract

Germanium (Ge) nanocrystals were synthesized by rapid thermal processing (RTP) of radio frequency sputtered Ge on silicon (100) substrate. A Si capping layer of 185 nm thickness was deposited onto the 225 nm Ge layer. The layered samples subsequently underwent annealing during RTP at 900 C for 30, 45, and 60s to subsequently evolve into Ge islands. Scanning electron microscopy (SEM) showed that as the annealing time increased, the Ge islands' size increased from 100 nm to 500 nm, and they became more uniform and dense. Atomic force. microscopy (AFM) indicated that the increase in annealing time reduced the surface roughness by approximately 50%. Raman spectra showed that good crystalline nanostructures of the Ge peaks were obtained for all samples, with increased annealing time improving the crystallinity. A visible broad band photoluminescence was observed from UV to green with blue shift as nanocrystallite size decreases. High resolution X-ray diffraction (HR-XRD) revealed cubic and tetragonal Ge phases in the samples with low tensile strain around the Ge islands. The results indicated that both annealing ambient temperature and time do significantly influence the formation and evolution of the Ge islands on Si.

Item Type:Article
Uncontrolled Keywords:rapid thermal processing, raman spectroscopy
Subjects:T Technology
Divisions:Malaysia-Japan International Institute of Technology
ID Code:62922
Deposited By: Fazli Masari
Deposited On:03 Oct 2017 04:15
Last Modified:03 Oct 2017 04:15

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