Zainal Abidin, Mastura Shafinaz and Morshed, Tahsin and Chikita, Hironori and Kinoshita, Yuki and Muta, Shunpei and Anisuzzaman, Mohammad and Park, Jong-Hyeok and Matsumura, Ryo and Mahmood, Mohamad Rusop and Sadoh, Taizoh and Hashim, Abdul Manaf (2014) The effects of annealing temperatures on composition and strain in SixGe(1-x) obtained by melting growth of electrodeposited Ge on Si (100). Materials, 7 (2). pp. 1409-1421. ISSN 1996-1944
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Official URL: http://dx.doi.org/10.3390/ma7021409
Abstract
The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 degrees C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at similar to 400 cm(-1) confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | silicon, rapid melting |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 62904 |
| Deposited By: | Fazli Masari |
| Deposited On: | 11 Jul 2017 07:25 |
| Last Modified: | 11 Jul 2017 07:25 |
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