Muhammad, Rosnita and Ahamad, Rahmalan and Ibrahim, Zuhairi and Othaman, Zulkafli (2014) Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters. Frontiers in Physics, 1588 . pp. 257-260. ISSN 0094-243X
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Official URL: https://dx.doi.org/10.1063/1.4866956
Abstract
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | nanowire, vapor-liquid solid |
| Subjects: | Q Science |
| Divisions: | Science |
| ID Code: | 62697 |
| Deposited By: | Fazli Masari |
| Deposited On: | 05 Jun 2017 02:01 |
| Last Modified: | 05 Jun 2017 02:01 |
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