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Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor

Yusof, Rubiyah and Ahmadi, Mohammad Taghi and Feizabadi, Hediyeh Karimi and Naghib, Seyed Danial and Rahmani, Meisam and Kiani, Mohammadjavad and Ghadiri, Mahdiar Hosein (2014) Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor. Journal of Computational and Theoretical Nanoscience, 11 (3). pp. 596-600. ISSN 1546-1955

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Official URL: http://dx.doi.org/10.1166/jctn.2014.3400

Abstract

Quantum capacitance as a one of the main characteristics of FET devices is in our focus in this paper. The quantum capacitance of graphene-based ion sensitive FET with an equivalent circuit is presented and also based on the analytical model a numerical solution is reported. The temperature effect on the quantum capacitance is highlighted, in which minimum capacitance dramatically rises by increasing the temperature. Furthermore, the capacitance model is adopted to derive current- voltage characteristic of the proposed device for different gate-source voltages. As the Vgs increases from 0.2 to 0.5 v, drain current (ID) is also rising. To further confirm this viewpoint, the presented analytical model is compared with experimental data and acceptable agreement is reported.

Item Type:Article
Uncontrolled Keywords:graphene, quantum capacitance
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:62555
Deposited By: Widya Wahid
Deposited On:18 Jun 2017 06:27
Last Modified:18 Jun 2017 06:27

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