Gas phase analysis of SIC film deposition in PECVD using FTIR spectroscopy

Abstract

Fourier Transform Infrared Spectroscopy was used to investigate the gas phase reactions during the deposition process of Silicon Carbide (SiC) film using VelY High Frequency - Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD). The VHFPECVD operated at plasma excitation frequency of J50MHz and 25 W of RF power was applied to generate plasma. Argon (Ar) was used to initiate plasma while methane and silane gas was used as precursor to deposit SiC. Hydrogen gas was added to the system and the flow rates were varied from 0 to 500 sccm. FTIR absorption spectra were recorded during the deposition process and the dissociation of silane and methane gas was investigated. Silane found to be fully decomposed during the deposition and methane shows a dependency of hydrogen flow rates.