Shaharuddin, Nur Amirah and Idrus, Sevia Mahdaliza and Isaak, Suhaila and A. Mohamed, Norliza and Yusni, N. A. A. (2014) Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer. Jurnal Teknologi (Sciences and Engineering), 67 (3). pp. 33-36. ISSN 2180-3722
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Official URL: http://dx.doi.org/10.11113/jt.v67.2761
Abstract
A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband Radio over Fiber (RoF) system to perform photodetection and frequency up-conversion
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | heterojunction bipolar transistor, optoelectronic mixer, InP/InGaAs |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 53301 |
| Deposited By: | Siti Nor Hashidah Zakaria |
| Deposited On: | 01 Feb 2016 03:53 |
| Last Modified: | 25 Jul 2018 07:55 |
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