Ghadiry, Mahdiar Hossein and Ismail, Razali and Saeidmanesh, Mehdi and Khaledian, Mohsen and Abd. Manaf, Asrulnizam (2014) Graphene nanoribbon field-effect transistor at high bias. Nanoscale Research Letters, 9 (1). ISSN 1931-7573
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Official URL: http://dx.doi.org/10.1186/1556-276X-9-604
Abstract
Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | breakdown, current, fabrication, graphene, high bias, model |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 52988 |
| Deposited By: | Siti Nor Hashidah Zakaria |
| Deposited On: | 01 Feb 2016 03:53 |
| Last Modified: | 19 Jul 2018 07:22 |
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