Saeidmanesh, Mehdi and Rahmani, Meisam and Karimi, Hediyeh and Khaledian, Mohsen and Ismail, Razali (2014) Analytical model for threshold voltage of double gate bilayer graphene field effect transistors. Microelectronics Reliability, 54 (1). pp. 44-48. ISSN 0026-2714
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Official URL: http://dx.doi.org/10.1016/j.microrel.2013.08.003
Abstract
A new model for threshold voltage of double-gate Bilayer Graphene Field Effect Transistors (BLG-FETs) is presented in this paper. The modeling starts with deriving surface potential and the threshold voltage was modeled by calculating the minimum surface potential along the channel. The effect of quantum capacitance was taken into account in the potential distribution model. For the purpose of verification, FlexPDE 3D Poisson solver was employed. Comparison of theoretical and simulation results shows a good agreement. Using the proposed model, the effect of several structural parameters i.e. oxide thickness, quantum capacitance, drain voltage, channel length and doping concentration on the threshold voltage and surface potential was comprehensively studied
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | bilayer graphene, channel length, doping concentration, oxide thickness, poisson solvers |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 51851 |
| Deposited By: | Siti Nor Hashidah Zakaria |
| Deposited On: | 01 Feb 2016 03:53 |
| Last Modified: | 31 Oct 2018 12:39 |
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