Gustiono, D. and Wibowo, E. and Othaman, Z. (2013) Synthesis and characterization of InGaAS nanowires grown by MOCVD. In: 2013 International Conference On Science & Engineering In Mathematics, Chemistry And Physics (SCIETECH 2013).
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Official URL: http://iopscience.iop.org/article/10.1088/1742-659...
Abstract
Semiconductor nanowires have been intensively investigated in order to study their unique fundamental and application properties that develop at the nano-scale. One of main problems in the growth of III-V semiconductor nanowire is uniformity both of in dimension and composition of chemical elements. We synthesized InGaAs nanowire on GaAs (111) substrate at 400 °C – 480 °C temperatures for 30 minutes using MOCVD. The nanowires grow perpendicular to the substrate via direct impinging mechanism and they have hexagonal shape with diameter of 80-150 nm. Dimension of nanowire, length and diameter, increase with increases of growth temperature. Formations of tapering could be controlled with growth at lower temperature.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | Journal of Physics: Conference Series 423 (2013) |
| Uncontrolled Keywords: | semiconductor, inGaAs nanowire |
| Subjects: | Q Science |
| Divisions: | Science |
| ID Code: | 51336 |
| Deposited By: | Haliza Zainal |
| Deposited On: | 27 Jan 2016 01:53 |
| Last Modified: | 04 Sep 2017 14:12 |
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