Ismail, Razali and Hamid, Fatimah (2013) Simulation of trigate fet with semi-cylindrical channel to reduce corner effect. In: UKSIM-AMSS 15Th International Conference On Computer Modelling And Simulation (UKSIM 2013), 10-12 April 2013, Cambridge, United Kingdom.
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Official URL: http://dx.doi.org/10.1109/UKSim.2013.13
Abstract
Trigate Field Effect Transistor (FET) is one of the promising devices to overcome MOSFET scaling. However, major problems arised due to edge of the corner which introduced a high leakage current as well as reliability issues. In this work, we have introduced a method to reduce these issues by incorporating a semi-cylindrical channel through simulation. Based on simulated results, it was found that this method can minimize the leakage current. In addition, this structure makes the device less sensitive to temperature effect and more robust. Besides, radius variation can be used to reduce leakage current even smaller. It was found that the maximum drive current of this device is higher compared to reported silicon nanowire trigate MOSFET.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Semi-cylindrical Channel, Trigate FET, Silicon Nanowire Trigate, Corner effect |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 51307 |
| Deposited By: | Haliza Zainal |
| Deposited On: | 27 Jan 2016 01:53 |
| Last Modified: | 21 Jun 2017 10:25 |
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