Shaharuddin, N. A. and Idrus, S. M. and Isaak, S. (2013) Performance of large signal model heterojunction bipolar transistor INP/INGAAS an optoelectronic mixer. In: Proceedings of the 2013 IEEE 8th Conference on Industrial Electronics and Applications, ICIEA 2013.
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Official URL: http://dx.doi.org/10.1109/ICIEA.2013.6566635
Abstract
A large-signal model of InP/InGaAs single HBThas been develop considering spectral performance and mixing. This model is based on Gummel Poon BJT model Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310nm for an up-conversion frequency of 30GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 51241 |
| Deposited By: | Haliza Zainal |
| Deposited On: | 27 Jan 2016 01:53 |
| Last Modified: | 18 Sep 2017 00:28 |
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