Mousavi, S. Mahdi and Ahmadi, Mohammad Taghi and Sadeghi, Hatef and Nilghaz, Azadeh and Kiani, Mohammad Javad and Ismail, Razali (2013) Bilayer graphene nanoribbon mobility model in ballistic transport limit. Journal of Computational and Theoretical Nanoscience, 10 (5). pp. 1262-1265. ISSN 1546-1955
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Official URL: http://dx.doi.org/10.1166/jctn.2013.2839
Abstract
Bilayer graphene nanoribbon (BGN) with tunable band gap which can be controlled by an external electric field is focused in our study. AB-stacked system with a stable structure is considered in a FET channel. Based on the assumed structure carrier density effect on charge mobility has been reported at different temperatures. Carrier mobility model is explained based on quantum confinement effect which indicates that carriers behave like traveling wave only in channel direction. Their behavior in other two directions can be approximated by standing wave as well. We prove that carrier mobility in BGNs is a function of temperature and carrier density which illustrate good agreement with experimental data.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | bgn ballistic transport, bgn field effect transistor, bilayer graphene nanoribbon (bgn), modeling, carrier mobility |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 49466 |
| Deposited By: | Siti Nor Hashidah Zakaria |
| Deposited On: | 02 Dec 2015 02:10 |
| Last Modified: | 30 Nov 2018 06:55 |
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