Rahmani, Meisam and Ahmadi, M. T. and Ghadiry, M. H. and Samadi, J. and Anwar, S. and Ismail, Razali (2012) The effect of applied voltage on the carrier effective mass in aba trilayer graphene nanoribbon. Journal of Computational and Theoretical Nanoscience, 9 (10). pp. 1618-1621. ISSN 1546-1955
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Official URL: http://dx.doi.org/10.1166/jctn.2012.2254
Abstract
Density of states which is an important parameter for the carrier statistics study of Trilayer Graphene Nanoribbon with ABA stacking is modeled in this paper. Analytical model for the density of states of ABA trilayer graphene nanoribbon is proposed and a numerical solution is obtained. In addition, applied voltage effect on carrier effective mass is simulated. The simulation results indicate that by increasing the applied voltage, the carrier effective mass (m?) increases and thus to obtain equal number of electrons and holes, the location of the intrinsic Fermi level will be moved far from the band gap centre.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | E-K Relationship, effective mass, Fermi Level |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 47604 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 22 Jun 2015 05:56 |
| Last Modified: | 05 Mar 2019 02:03 |
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