I. P., Marko and Batool, Z. and Hild, K. and Jin, S. R. and Hossain, N. and Hosea, T. J. C. and Petropoulos, J. P. and Zhong, Y. and Dongmo, P. B. and Zide, J. M. O and Sweeney, S. J. (2012) Temperature and bi-concentration dependence of the bandgap and spin-orbit splitting in ingabias/inp semiconductors for mid-infrared applications. Applied Physics Letters, 101 (22). ISSN 0003-6951
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Official URL: https://dx.doi.org/10.1063/1.4768532
Abstract
Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, Eg, and spin-orbit splitting, ?SO, respectively. The possibility of achieving ?SO?>?Eg and a reduced temperature (T) dependence for Eg are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure Eg(x, T) and ?SO (x, T) in In0.53Ga0.47BixAs1-x/InP samples for 0?=?x?=?0.039 by various complementary optical spectroscopic techniques. While we find no clear evidence of a decreased dEg/dT (˜0.34?±?0.06?meV/K in all samples) we find ?SO?>?Eg for x?>?3.3–4.3%. The predictions of a valence band anti-crossing model agree well with the measurements.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | solid-state laser, laser pump powers, closed-cycle helium cryostat |
| Subjects: | Q Science > QC Physics |
| Divisions: | Science |
| ID Code: | 47584 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 22 Jun 2015 05:56 |
| Last Modified: | 29 Feb 2020 13:12 |
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