Ghadiry, Mahdiar H. and Nadi, Mahdieh S. and Rahmani, Meisam and Abd. Manaf, Asrulnizam (2012) Modelling and simulation of saturation region in double gate graphene nanoribbon transistors. Semiconductors, 46 (1). pp. 126-129. ISSN 1063-7826
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Official URL: http://dx.doi.org/10.1134/S1063782612010101
Abstract
Novel analytical models for surface field distribution and saturation region length for double gate graphene nanoribbon transistors are proposed. The solutions for surface potential and electric field are derived based on Poisson equation. Using the proposed models, the effects of several parameters such as drain-source voltage, oxide thickness and channel length on the length of saturation region and electric field near the drain are studied.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | channel length, oxide thickness, solid state electron |
| Subjects: | Q Science > QD Chemistry |
| Divisions: | Electrical Engineering |
| ID Code: | 47235 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 22 Jun 2015 05:56 |
| Last Modified: | 05 Mar 2019 01:51 |
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