Alireza, S. and Ghoshal, S. K. and Othaman, Z. (2012) Growth of Ge/Si(100) nanostructures by radio-frequency magnetron sputtering: the role of annealing temperature. Chinese Physics Letters, 29 (4). ISSN 1741-3540
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Official URL: http://iopscience.iop.org/article/10.1088/0256-307...
Abstract
Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600°C, 700°C and 800°C for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ∼0.29 eV in the PL peak is observed with increasing annealing temperature.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Nanocrystals, Germanium nanocrystals |
| Subjects: | Q Science > QC Physics |
| Divisions: | Science |
| ID Code: | 47040 |
| Deposited By: | Fazli Masari |
| Deposited On: | 22 Jun 2015 05:56 |
| Last Modified: | 21 Oct 2018 04:33 |
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