Saeidmanesh, Mehdi and Webb, Jeffrey and Ahmadi, Mohammad Taghi and Feiz Abadi, H.K and Rahmani, Meisam and Ismail, Risana and Karimi, Hediyeh (2012) Carrier concentration modeling of bilayer graphene. AIP Conference Proceedings, 1499 . pp. 280-282. ISSN 0094-243X
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Official URL: http://dx.doi.org/10.1063/1.4769002
Abstract
In this paper, the carrier concentration for bilayer graphene is modelled. The effect of an applied interlayer voltage V on the bandgap and carrier concentration is analysed using a new analytical approach. We begin by modelling of the density of states followed by carrier concentration as a function of V. It is found that as V increases, carrier concentration and the bandgap also increase.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | AIP |
| Subjects: | T Technology > TL Motor vehicles. Aeronautics. Astronautics |
| Divisions: | Electrical Engineering |
| ID Code: | 46669 |
| Deposited By: | Haliza Zainal |
| Deposited On: | 22 Jun 2015 05:56 |
| Last Modified: | 18 Sep 2017 01:40 |
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