Rahmani, Komeil and Rahmani, Meisam and Ahmadi, Mohammad Taghi and Shayesteh, Nahid and Amin, Noraliah Aziziah and Ismail, Razali (2011) Current-voltage modeling of bilayer graphene nanoribbon Schottky diode. In: 2011 IEEE Regional Symposium On Micro And Nano Electronics (IEEE-RSM 2011).
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Official URL: http://ieeexplore.ieee.org/document/6088337/author...
Abstract
This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to an exposed semi-conductor surface. The metal semiconductor diodes were replaced by the p-n junction in the 1950's because they were not easily reproduced or found to be mechanically reliable. As a result the practicability of making use of the semiconductor and vacuum technology to construct reproducible and dependable metal semiconductor contacts. Therefore, a high consideration occurs for the schottky barrier diode or metal semiconductor rectifying contact. A model to evaluate or design the current-voltage (I-V) characteristics of BGNRs schottky diode as a function of physical parameters, such as GNR width (w), effective mass (m*), gate insulator thickness (tins), and electrical parameters, such as schottky barrier (SB) height (φSB) are presented in this paper.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Schottky diodes, Schottky barriers, Metals, P-n junctions, Current density, Logic gates, semiconductor device models, graphene, nanoribbons |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 45708 |
| Deposited By: | Haliza Zainal |
| Deposited On: | 10 Jun 2015 03:01 |
| Last Modified: | 02 Jul 2017 07:52 |
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