Arora, Vijay Kumar and Tembhurne, Saurabh and Zainal Abidin, Mastura Shafinaz and A. Riyadi, Munawar (2011) Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor. In: The International Workshop On Physics And Mathematics (Iwpm 2011).
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Abstract
The degradation of ballistic mobility in a metal-oxide semiconductor field-effect transistor is attributed to the nonstationary ballistic injection from the contacts as the length of a channel shrinks to the length smaller than the scattering-limited mean free path. Apparent contradiction between the rise of magnetoresistance mobility and fall of drift mobility with increasing channel concentration is attributed to scattering-dependent magnetoresistance factor. The ballistic mean free path of injected carriers is found to be substantially higher than the long-channel drift mean free path. Excellent agreement with the experimental data on length-limited ballistic mobility is obtained. (C) 2011 American Institute of Physics. [doi:10.1063/1.3621885]
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | LOW-DIMENSIONAL NANOSTRUCTURES; IMPURITY SCATTERING; SATURATION VELOCITY; CARRIER MOBILITY; TRANSPORT; SIMULATION; MOSFETS |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 45689 |
| Deposited By: | Haliza Zainal |
| Deposited On: | 10 Jun 2015 03:01 |
| Last Modified: | 30 Aug 2017 07:50 |
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