Universiti Teknologi Malaysia Institutional Repository

Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts

Riyadi, Munawar A. and Loong, Michael Peng Tan and Hashim, Abdul Manaf and Arora, Vijay K. (2011) Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts. AIP Conference Proceedings, 1347 . pp. 169-174. ISSN 1523-651X

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Abstract

The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to or smaller than the scattering-limited mean free time. For an applied voltage of 0.1 V or lower, the transient response effect degrades the mobility below its long-length limit. The model includes the carrier injection from the Ohmic contacts which can explain the mobility diminution in the nanoscale MOSFET. As a result, the new model shows excellent agreement with the ballistic mobility experimental data.

Item Type:Article
Uncontrolled Keywords:carrier injection
Subjects:Q Science > QP Physiology
Divisions:Electrical Engineering
ID Code:45046
Deposited By: Haliza Zainal
Deposited On:27 Apr 2015 04:50
Last Modified:01 Oct 2017 03:28

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