Characterization of liquid-phase sensor utilizing gan-based two terminal devices

Abstract

GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capability of detection up to 600 °C [1–5]. The ability of electronic devices fabricated on these materials to operate in high temperature, high power and high flux/energy radiation conditions enable performance enhancements in a wide variety of spacecraft, satellite, homeland defense, mining, automobile, nuclear power, and radar applications.