Carbon thin films deposition by KRF pulsed laser at different temperatures

Abstract

The surface morphology of carbon thin films deposited at temperatures 20°C and 300°C have been done by Atomic Force Microscope (AFM). The 10,000 pulses of KrF Excimer laser of wavelength 248 nm, pulse energy 13-50 mJ and pulse width 20 ns was focused at an angle of 45° to ablate pure graphite target. Silicon (111) was used as a substrate to deposit carbon thin film and placed at distance of 15 mm from the target surface. The whole experiment has been performed under vacuum ~ 10-4 Torr in stainless steel vacuum chamber. The nature of bonding of carbon thin films deposited at different temperatures has been done by using technique Fourier Infrared Transformation Spectroscopy (FTIR). Results obtained from AFM and FTIR support each other and explain the effect of substrate temperature on thin films deposition.