Lee, Jia Yen and Mat Isa, Ahmad Radzi and Ahmad Dasuki, Karsono (2005) Modeling and simulation of single-electron transistors. Journal of Fundamental Sciences, 1 . pp. 1-6. ISSN 1823-626X
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. It operates in single electronics regime where only one electron can tunnel from source to drain via island. Thus single electron tunneling is the phenomena that describe the principle of SET. Owing to the stochastic nature of the tunneling event, a tunneling electron is considered as a discrete charge. To simulate the SET, Monte Carlo method is used due to its reasonable accuracy in the single electronics simulation. A model is described and used to study the electronic properties of SET. Monte Carlo method follows the tunneling path of a representative number of electrons and it can gives a clear picture of the inner work of the single electron circuits.
|Uncontrolled Keywords:||| Modeling | Single-electron transistor | Coulomb blockade | Single-electron tunneling ||
|Subjects:||Q Science > QC Physics|
|Deposited By:||Prof Dr Mohd Marsin Sanagi|
|Deposited On:||16 Feb 2007 03:06|
|Last Modified:||08 Feb 2017 04:27|
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