Universiti Teknologi Malaysia Institutional Repository

Epitaxial method of quantum devices growth

Muhammad, Rosnita and Othaman, Zulkafli and Sakrani, Samsudi Epitaxial method of quantum devices growth. Journal of Fundamental Sciences . ISSN 1823-626X (Submitted)

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Official URL: http://www.ibnusina.utm.my/jfs/

Abstract

Epitaxy is an affordable method for growing high quality crystalline in quantum devices applications. The fabrication of the quantum devices is an outstanding challenge in nanostructure materials science. A lot of attention has been devoted to the growth and characterization of quantum dots by using epitaxy method. In this paper, we present several epitaxy methods in recent advancement. We then examine MBE and MOCVD systems and go deeper to MOCVD with explanation on basic chemical reaction process, gas delivery equipment, reaction chambers and safety. Growth mechanisms and criteria for growth rate are also described. We finally compared the MOCVD system at our place, Ibnu Sina Institute at University Technology Malaysia with the vertical chamber and reactor delivery system. Lastly, we shown a preliminary results on AFM samples of our first working reactor system.

Item Type:Article
Uncontrolled Keywords:epitaxy; quantum devices; MOCVD; reactor chamber
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:4128
Deposited By: Mrs Rosnita Muhammad
Deposited On:16 Aug 2007 11:23
Last Modified:01 Jun 2010 03:14

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