Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET)

Abstract

The thesis presents the study of the basic electrical characteristics changes oa a Metal-Oxide-Semiconductor Field Effect Transistor due to the radiation of Gamma rays and neutron.The analysis which been carried out were more emphesis on current-voltage characteristic before and after expose to radiation. Transistor used in the study were nLDD-MOSFET (n Lightly Doped Drain MOSFET) type. The transistor technology were from SCMOS 2/RT 0.6 µm prototype MATRA-MHS_TEMIC. SMU Keithley 236 were used as a measurement source and the data were analysed by Microcal Origin 3.5 softwere. In this analysis, the characteristic changes of the current drain-source towards voltage gate-source and the current drain source towards voltage drain source were taken as a data before and after expose being exposed to radiation. The data then were analysed and concluded in term of the changes of its electrical charecteristics inline with the theory that were discussed in the previous chapter