Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser

Abstract

The polycrystalline thin copper films on semiconductor substrates are of interest for many semiconductor devices. Hence the aim of this research is to recrystallize copper silicon thin film. In order to achieve this objective, the Q-switched Nd:YAG laser was employed as a source to re-crystallize the doped silicon thin film (STF) with copper. A silicon thin film was prepared via low pressure physical vapor deposition (PVD). The STF was annealed by two techniques, first by using conventional method via tube furnace, second by using Q-switched Nd:YAG laser annealing. The microstructure of thin film was analyzed using Atomic Force Microscope (AFM). The results showed that, the grain size of the copper film increased with the energy density of the Nd:YAG laser. However, the grain size was found to reduce after exceeding the critical energy. The large grain size obtained for copper silicon thin film was 2426.04 nm at the corresponding energy density of 3989.48 mJ/cm-2.