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Focused ion beam milling of exfoliated graphene for prototyping of electronic devices

Schmidt, Marek E. and Johari, Zaharah and Ismail, Razali and Mizuta, Hiroshi and Chong, Harold M. H. (2012) Focused ion beam milling of exfoliated graphene for prototyping of electronic devices. Microelectronic Engineering, 98 . pp. 313-316. ISSN 0167-9317

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Official URL: http://dx.doi.org/10.1016/j.mee.2012.07.090

Abstract

We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250 nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58 kΩ.

Item Type:Article
Uncontrolled Keywords:Graphene, Prototyping
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:33652
Deposited By: Fazli Masari
Deposited On:10 Sep 2013 00:26
Last Modified:30 Nov 2018 06:37

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