Electrical properties of copper nitride thin film prepared by reactive DC sputtering

Abstract

The purpose of this research is to study the electrical properties of copper nitride (Cu3N) thin films. Cu3N were deposited on corning glass substrates by using reactive DC sputtering technique. Four samples were prepared with different deposition time to obtain samples of different thicknesses. The thickness of the samples increases as the deposition time increase. The electrical conductivity of Cu3N thin films was measured by using the Van der Pauw method. Results obtained show that the conductivity of Cu3N films increases as the thickness of the films increases. The effect of temperature on conductivity of the Cu3N thin film was also studied. The conductivity of the samples was measured under high temperature from 313 K to 573 K. The results show that the conductivity of Cu3N thin films increases as the temperature increases. The activation energy was also calculated. The sample with high conductivity has low activation energy.