Monolayer graphene nanoribbon p-n junction

Abstract

Prominent electrical properties of graphene nanoribbon such as high mobility, quantum transport, one dimensional behaviors and easy fabrication make it appropriate as a promising potential material on nanoelectronic applications. Study has shown that the thermal mobility of graphene is twice that of diamond while the electron mobility is greater than that of silicon. Graphene p–n junction, as a basic structure of nanoelectronic devices in comparison with the silicon based p–n junction is discussed in this paper. The graphene p–n interface exhibits an enhanced transport along the junction in compare to the conventional p–n junctions. This study presents findings on space charge region width and its junction capacitance, transport along graphene nanoribbon p–n junction and knee voltage.