Mohamed Sultan, Suhana and Sun, K. and Partridge, J. and Allen, M. and Ashburn, P. and Chong, H. M. H. (2011) Fabrication of ZnO nanowire device using top-down approach. In: 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011. IEEE Explorer, pp. 77-79. ISBN 978-145770090-3
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1109/ULIS.2011.5757956
Abstract
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode.
| Item Type: | Book Section |
|---|---|
| Uncontrolled Keywords: | al-metal, anisotropic etch, contact barrier, filtered cathodic vacuum arc, image mapping, Ohmic behaviour, optical lithography, SEM, top-down approach, topdown, ZnO nanowires, ZnO thin film |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 29709 |
| Deposited By: | Liza Porijo |
| Deposited On: | 22 Mar 2013 08:31 |
| Last Modified: | 04 Feb 2017 08:32 |
Repository Staff Only: item control page
