Othaman, Zulkafli and Sakrani, Samsudi and Wibowo , Edy and Sumpono, Imam (2011) The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth. NANO, 6 (2). pp. 159-165. ISSN 1793-2920
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Official URL: http://dx.doi.org/10.1142/S1793292011002457
Abstract
Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | InxGa1-xAs nanowires, gold-assisted growth, direct impinging mechanism |
| Subjects: | Q Science > Q Science (General) |
| Divisions: | Science |
| ID Code: | 29478 |
| Deposited By: | Fazli Masari |
| Deposited On: | 01 Apr 2013 05:48 |
| Last Modified: | 13 Feb 2017 07:23 |
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