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Fabrication and characterization of n-AlGaAs/GaAs schottky diode for rectenna device application

Parimon, N. and Mustafa, F. and Hashim, Abdul Manaf and Abd Rahman, Shaharin Fadzli and Rahman, A. R. A. and Osman, M. N. (2011) Fabrication and characterization of n-AlGaAs/GaAs schottky diode for rectenna device application. IOP Conference Series: Materials Science and Engineering, 17 (1). 1-6  . ISSN 1757-8981

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Official URL: http://dx.doi.org/10.1088/1757-899X/17/1/012022

Abstract

Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I–V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:29394
Deposited By: Mrs Liza Porijo
Deposited On:27 Mar 2013 00:23
Last Modified:13 Feb 2017 06:54

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