Universiti Teknologi Malaysia Institutional Repository

Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts

Riyadi, M. A. and Tan, Michael Loong Peng and Hashim, Abdul Manaf and Arora, Vijay Kumar (2011) Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts. In: AIP Conference Proceedings. American Institute of Physics., pp. 169-174. ISBN 978-073540903-3

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Official URL: http://dx.doi.org/10.1063/1.3586978


The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to or smaller than the scattering-limited mean free time. For an applied voltage of 0.1 V or lower, the transient response effect degrades the mobility below its long-length limit. The model includes the carrier injection from the Ohmic contacts which can explain the mobility diminution in the nanoscale MOSFET. As a result, the new model shows excellent agreement with the ballistic mobility experimental data.

Item Type:Book Section
Uncontrolled Keywords:ballistic transport, mobility degradation, nano-MOSFET
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:29361
Deposited By: Liza Porijo
Deposited On:07 Mar 2013 08:19
Last Modified:04 Feb 2017 08:44

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