Hashim, Abdul Manaf and Abd. Rahman, Shaharin Fadzli and Osman, Mohd. Nizam and Mustafa, Farahiyah (2011) Power conversion efficiency of AlGaAs/GaAs schottky diode for low-power on-chip rectenna device application. In: Enabling Science and Nanotechnology. American Institute of Physics, Kuala Lumpur, pp. 193-196. ISBN 978-0-7354-0897-5
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Official URL: http://dx.doi.org/10.1063/1.3586982
Abstract
A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
| Item Type: | Book Section |
|---|---|
| Uncontrolled Keywords: | schottky-barrier diodes, voltage measurement, metallisation, electrons |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 29313 |
| Deposited By: | INVALID USER |
| Deposited On: | 13 Mar 2013 02:20 |
| Last Modified: | 04 Feb 2017 07:36 |
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