Universiti Teknologi Malaysia Institutional Repository

Dual-functional on-chip AlGaAs/GaAs schottky diode for RF power detection and low-power rectenna applications

Hashim, Abdul Manaf and Mustafa, Farahiyah and Abd Rahman, Shaharin Fadzli and Ab Rahman, Ab Rahim (2011) Dual-functional on-chip AlGaAs/GaAs schottky diode for RF power detection and low-power rectenna applications. SENSORS, 11 (8). pp. 8127-8142. ISSN 1424-8220

[img] PDF (Abstract)
132Kb

Official URL: http://dx.doi.org/10.3390/s110808127

Abstract

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Item Type:Article
Uncontrolled Keywords:AlGaAs/GaAs, HEMT, schottky diode, RF power detector, rectenna
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:28966
Deposited By: Liza Porijo
Deposited On:06 Dec 2012 08:37
Last Modified:06 Dec 2012 08:37

Repository Staff Only: item control page