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Carrier statistics model for a bilayer graphene nanoribbon in the nondegenerate regime

Sadeghi, H. and Ahmadi, Mohammad Taghi and Webb, J. F. and Mousavi, S. M. and Ismail, Razali (2011) Carrier statistics model for a bilayer graphene nanoribbon in the nondegenerate regime. In: Proceedings Of The Fourth Global Conference On Power Control And Optimization. American Institute of Physics, 4, 184 -187. ISBN 978-073540893-7

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Official URL: http://dx.doi.org/10.1063/1.3592464

Abstract

This paper focuses on the electronic transport properties of bilayer Graphene nanoribbons (BGNRs). The electronic transport of two dimensional AB stacked BGNRs with widths less than 10 nm is investigated. Due to the small width, the BGNR can be assumed to operate as a one dimensional device. A mathematical model of carrier concentration in BGNRs in the nondegenerate regime is presented. The model shows that in this regime the carrier statistics of BGNRs can be expressed by an exponential function of the normalized Fermi energy ?, which is particularly useful in the lower carrier concentration regions.

Item Type:Book Section
Uncontrolled Keywords:bilayer, carrier statistics, degenerate limit, field effect transistor, graphene nanoribbon
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:28926
Deposited By: Liza Porijo
Deposited On:04 Dec 2012 04:41
Last Modified:04 Dec 2012 04:41

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